Tokyo, Japan, October 25, 2016 - Renesas Electronics Corporation (TSE: 6723), the world's leading supplier of semiconductor solutions, today announced the launch of its new series of semiconductor laser diodes, the "NX6375AA Series." The newly developed Direct Modulation Distributed Feedback Laser Diode (DFB LD, Note 1) supports 25 Gbps & TImes; 4 wavelength operation as a light source for 100 Gbps optical transceivers for communication between data center servers and routers.
Supports operation at 85 ° C high temperature, helping to achieve stable operation in high-speed communication and high temperature environment
Renesas Electronics Semiconductor Laser Diode: NX6375AA Series
The NX6375AA series enables system developers to develop high-speed optical transceivers that operate with high stability even in high temperature environments. The new series can be used on servers and routers used in data centers. The NX6375AA series is about to be mass-produced.
In recent years, with the popularity of cloud computing in the Internet of Things era, the data center size and processing power for processing large amounts of data is expected to increase at a rate of 59% per year (Note 2). For optical transceivers that use to communicate between servers and routers in the data center, there is a need to increase the transmission rate, and it is expected that 100Gbps systems will replace the current mainstream 40Gbps systems, with an annual growth rate of 75% (Note 2).
However, as the system generates more heat (proportional to the communication speed), the operating state of the system may become unstable. Therefore, achieving stable operation and higher communication speed in a high temperature environment has become a major problem for optical transceivers. .
Renesas Electronics has introduced semiconductor LDs in this field since 2004, at a communication rate of 10 Gbps. The new NX6375AA LD series supports 100 Gbps systems that help increase the speed and reliability of user optical transceiver devices and are expected to become the mainstream device for future communication systems by addressing these issues in this area.
Key features of the new NX6375AA series:
(1) Industry's first stable operation up to 28 Gbps / wavelength over the operating temperature range of Tc = -5°C to 85°C
LD supports not only 100 Gbps at 4 wavelengths, but also systems up to 112 Gbps. In addition, LD uses Renesas Electronics' unique embedded structure and uses aluminum gallium indium arsenide (AlGaInAs) as its material. Therefore, by optimizing the DFB structure (Note 2), the LD can achieve a maximum transfer rate of 28 Gbps over a wide operating temperature range of Tc = -5 ° C to 85 ° C.
The four wavelengths in the LD series are 1270, 1290, 1310, and 1330 nanometers (nm), which support the wavelength spacing of 100Gbps CWDM (Note 3).
(2) Ensuring high reliability of MTTF 100,000 hours (Note 4)
In order to make these LDs safe to use in data center environments, Renesas Electronics uses a selective epitaxial layer growth process for wafer growth, controlling crystal defects in the active layer, and forming a protective anti-oxidation layer (Renesas Electronics' unique technology ). Since aluminum materials can be prevented from oxidizing during manufacturing, the average time to failure (MTTF) of these laser diodes can reach industry-leading 100,000 hours, ensuring high reliability (Note 4).
Renesas Electronics Semiconductor Laser Diode "NX6375AA Series" Diagram
Renesas Electronics plans to aggressively expand its LD product line for 100 Gbps high-speed communications applications. Renesas Electronics is also working to expand its LD operating temperature range in the low temperature direction to meet the needs of applications such as communication base stations. In addition, Renesas Electronics can provide a higher value-added solution by combining these LDs with Renesas Electronics' high-speed optical receivers and Renesas Electronics Microcontrollers (MCUs).
Pricing and availability
Samples of the NX6375AA series are available now and are priced at $50 per wavelength. Mass production is starting today and is expected to reach a monthly capacity of 100,000 units for four wavelengths in April 2017. (Prices and availability are subject to change without notice.)
For specifications of the NX6375AA series, please refer to the specification sheet (PDF: 98 KB).
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(Note 1) Distributed feedback laser diode. An LD having an internal diffraction lattice structure and single mode resonance. DFB LD is ideal for high speed communication applications.
(Note 2) According to Renesas Electronics Research (October 25, 2016)
(Note 3) CWDM: coarse wavelength division multiplexing. A technique in which optical signals of different wavelengths (i.e., multiple channels) are transmitted on a single optical fiber. With these devices, each wavelength of 25 Gbps at 4 wavelengths enables a total capacity of 100 Gbps.
(Note 4) It is not guaranteed to achieve high reliability of MTTF 100,000 hours.
About Renesas Electronics Co., Ltd.
Renesas Electronics Corporation (TSE: 6723) provides customers with professional and trusted innovative embedded designs and complete semiconductor solutions designed to safely and reliably improve people's work and use billions of connected smart devices using their products. lifestyle. As the world's leading supplier of microcontrollers, analog power devices and SoC products, Renesas Electronics offers a wide range of applications for automotive, industrial, automotive (HE), office automation (OA), and information and communication technologies (ICT). Professional technical support, quality assurance and comprehensive solutions, look forward to working with you to create an infinite future.
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