On May 7, Trinity Material and ARC Energy announced that sapphire grown by ARC Energy's controlled heat extraction system (CHES) crystal growth furnace has been certified and used by two leading LED chip companies. For the production of high quality LED chips.
According to ARC Energy's CHES method, sapphire crystals are grown on the c-axis, while in the traditional process, sapphire is grown on the a-axis and wafers are extracted on the c-axis. The same person electrons show that the performance of the CHES chip can reach the same level or higher compared to the chip produced by the a-axis growth process, and there is no color problem at the wafer or chip level. Compared with the conventional a-chip, the light output of the LED chip manufactured by the CHES chip is greatly increased.
ARC Energy said that with the company's unique flexible c-axis CHED crystal growth furnace, the same electronics can meet the rapid growth of 4 inch to 8 inch large diameter sapphire substrate. Tongren Electronics is accelerating the mass production of sapphire crystals to meet the growing demand for large diameter sapphire wafers in the LED market.
According to ARC Energy's CHES method, sapphire crystals are grown on the c-axis, while in the traditional process, sapphire is grown on the a-axis and wafers are extracted on the c-axis. The same person electrons show that the performance of the CHES chip can reach the same level or higher compared to the chip produced by the a-axis growth process, and there is no color problem at the wafer or chip level. Compared with the conventional a-chip, the light output of the LED chip manufactured by the CHES chip is greatly increased.
ARC Energy said that with the company's unique flexible c-axis CHED crystal growth furnace, the same electronics can meet the rapid growth of 4 inch to 8 inch large diameter sapphire substrate. Tongren Electronics is accelerating the mass production of sapphire crystals to meet the growing demand for large diameter sapphire wafers in the LED market.
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