The Korea Institute of Science and Technology released a message that the institute, in conjunction with Yonsei University, developed a hybrid spatial double-layer structure using two-dimensional tungsten selenide nano-single chips and one-dimensional zinc oxide oxide semiconductor nanowires, which can be perceived from ultraviolet to near. Infrared light photodiode device. The findings were published in the international academic journal Advanced Functional Materials.
Low-dimensional space nano-semiconductor components have broad application prospects in next-generation semiconductors and are key areas for research and development. The two-dimensional components used by the research group have the characteristics of high light response performance and high hole mobility, and are P-type semiconductor components. One-dimensional zinc oxide nanowires are one of the best one-dimensional nano-semiconductors, and have high electron mobility characteristics, and are expected to be applied to high-performance electronic component N-type semiconductor components. A one-dimensional two-dimensional mixture is formed to form a two-dimensional structure (PN type) of a mixed dimensional space, and a photodiode element is developed.
The research team said that the study successfully implemented two-dimensional images and is expected to be widely used in a new generation of image sensor components in the future.
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